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Effective field theory of topological insulator and the Foldy-Wouthuysen transformation

机译:拓扑绝缘体的有效场论和Foldy-Wouthuysen   转型

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摘要

Employing the Foldy-Wouthuysen transformation it is demonstratedstraightforwardly that the first and second Chern numbers are equal to thecoefficients of the 2+1 and 4+1 dimensional Chern-Simons actions which aregenerated by the massive Dirac fermions coupled to the Abelian gauge fields. Atopological insulator model in 2+1 dimensions is discussed and by means of adimensional reduction approach the 1+1 dimensional descendant of the 2+1dimensional Chern-Simons theory is presented. Field strength of the Berry gaugefield corresponding to the 4+1 dimensional Dirac theory is explicitly derivedthrough the Foldy-Wouthuysen transformation. Acquainted with it the secondChern numbers are calculated for specific choices of the integration domain. Amethod is proposed to obtain 3+1 and 2+1 dimensional descendants of theeffective field theory of the 4+1 dimensional time reversal invarianttopological insulator theory. Inspired by the spin Hall effect in graphene, ahypothetical model of the time reversal invariant spin Hall insulator in 3+1dimensions is proposed.
机译:借助Foldy-Wouthuysen变换,直接证明了第一和第二Chern数等于2 + 1和4 + 1维Chern-Simons动作的系数,这是由与Dibel场耦合的大量Dirac费米子产生的。讨论了2 + 1维拓扑绝缘子模型,并通过降维方法提出了2 + 1维Chern-Simons理论的1 + 1维后代。通过Foldy-Wouthuysen变换明确推导了与4 + 1维Dirac理论相对应的Berry规范场的场强。熟悉第二次Chern编号是针对积分域的特定选择计算的。提出了一种获取4 + 1维时间逆不变不变绝缘子理论的有效场论的3 + 1和2 + 1维后代的方法。受到石墨烯自旋霍尔效应的启发,提出了3 + 1维时间不变自旋霍尔绝缘子的假设模型。

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